CHU2299-99F_15 Datasheet, PDF (2/12 Pages) United Monolithic Semiconductors – 40-44GHz Up converter

CHU2299-99F
40-44GHz Up converter
Electrical Characteristics
Tamb.= +25°C
Symbol
Parameter
Min Typ Max Unit
F_RF
RF frequency range
F_LO
LO frequency range
40
44 GHz
9.5
11.5 GHz
G_c
Conversion gain @min. attenuation
5
dB
G Gain control range
20
dB
P_LO
LO Input power
1
dBm
NF Noise figure at gain max
Noise figure all case
13
27
dB
OIP3
Output IP3@ min. attenuation
Output IP3@ max. attenuation
16
4
dBm
RL RF & LO Return Loss
12
dB
4xF_LO_lk 4xLO leakage on RF port @min. Att.
DX, DA LO multiplier, buffer and RF amplifier biasing
-5
dBm
4
V
GM Mixer DC gate biasing
-0.6
V
G3 LO buffer gate biasing
-0.3
V
GX Multiplier gate biasing
-1.2
V
GA RF amplifier gate biasing
-0.5
V
AT Attenuation voltage control
-1.5
0.5
V
Id
Drain current
250
mA
Electrostatic discharge sensitive device observe handling precautions!
These values are representative of chip on board measurements with an external 180° hybrid
balun between IF & IFb.
Absolute Maximum Ratings ⁽¹⁾
Tamb.= +25°C
Symbol
Parameter
Values
Unit
DX, DA LO multiplier, buffer and RF amplifier biasing
4.5
V
Id
Drain bias current
310
mA
G3, GA Amplifier gate biasing
-2; +0.6
V
GX, GM Multiplier and mixer gate biasing
-2; +0.6
V
AT
P_LO
Pin_RF
Attenuation voltage control
Maximum peak LO input power overdrive ⁽²⁾
Maximum peak RF input power overdrive ⁽²⁾
-2
V
10
dBm
17
dBm
Tj
Junction temperature
175
°C
Ta
Operating temperature range
-40 to +85 °C
Tstg
Storage temperature range
-55 to +155 °C
RTh
Thermal resistance, Tback side = +85°C, Ptotal = 1 W
73
°C/W
(1) _{Operation of this device above anyone of these parameters may cause permanent damage}
(2) _{Duration < 1s}
Ref. : DSCHU22992019 - 19 Jan 12
2/12
Specifications subject to change without notice
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