CHT4699-99F Datasheet, PDF (2/12 Pages) United Monolithic Semiconductors – 36-44GHz Variable Attenuator

CHT4699-99F
36-44GHz Variable Attenuator
Electrical Characteristics
Tamb.= +25°C,
Symbol
Parameter
Min Typ Max Unit
Freq Frequency range
36
44 GHz
Min Att. |S21| (V1=-5V;V2=-5V)
-4
dB
Dyn Attenuation dynamic
30
dB
RLin Input Return loss (any attenuation)
-10
dB
RLout Output Return loss (any attenuation)
-8
dB
Pin1dB Input 1dB compression point (any
attenuation)
20
dBm
I IP3
Input 3^rd order Intercept Point (any
attenuation)
27
dBm
These values are representative of on-wafer measurements that are made without bonding
wires at the RF ports.
A bonding wire of typically 0.1 to 0.15nH will improve the matching at the accesses.
Absolute Maximum Ratings ⁽¹⁾
Tamb.= +25°C
Symbol
Parameter
Values
Unit
V1
V1 control voltage
-6 to +0.6
V
V2
V2 control voltage
Pin
RF input power overdrive ⁽²⁾
-6 to +0.6
+33
V
dBm
Ta
Operating temperature range
-40 to +85
°C
Tstg Storage temperature range
-55 to +150
°C
(1) _{Operation of this device above anyone of these parameters may cause permanent damage.}
(2) _{Duration < 1s.}
Typical Bias Conditions
Tamb.= +25°C
Symbol Pad N^o
Parameter
V1
V1 _{V1 control voltage}
V2
V2 _{V2 control voltage}
For optimum linearity V1& V2 should be tuned in sequence.
Values Unit
-5 to 0
V
-5 to 0
V
Ref. : DSCHT46992090 - 30 Mar 12
2/12
Specifications subject to change without notice
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