English
Language : 

CHT4690 Datasheet, PDF (2/13 Pages) United Monolithic Semiconductors – 5-30GHz ATTENUATOR
CHT4690
5-30GHz Attenuator
Electrical Characteristics
Tamb. = 25°C
Symbol
Parameter
Min Typ
Fin
Input frequency range
Min Att.
|S21| (V1=-5V;V2=-5V) ( 5 to 12GHz)
|S21| (V1=-5V;V2=-5V) ( 13 to 30GHz)
Max Att. |S21| (V1=0V;V2=0V) (5 to 12GHz)
|S21| (V1=0V;V2=0V) (13 to 30GHz)
VSWRin Input VSWR (any attenuation) ( 5 to 30GHz)
VSWRout Output VSWR (any attenuation) ( 8 to 30GHz)
Pin1dB Input 1dB compression point (any attenuation) (5 to 20GHz)
C/I3 C/I3 @ Pin/tone=12dBm (any attenuation) (up to 26GHz)
5
-2.5
-6.5
-25
-34
25
40
ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions !
Max
30
-3
-7.5
2.3:1
2.5:1
Unit
GHz
dB
dB
dB
dB
dBm
dB
Absolute Maximum Ratings (1)
Tamb. = 25°C
Symbol
Parameter
Values
Unit
V1
V1 control voltage
-6V
V
V2
V2 control voltage
-6V
V
Pin
RF input power
30
dBm
Ta
Operating temperature range
-40 to +85
°C
Tstg
Storage temperature range
-55 to +155
°C
(1) Operation of this device above anyone of these parameters may cause permanent damage.
Typical Bias Conditions
for an ambient Temperature of +25°C
Symbol
V1 V1 control voltage
V2 V2 control voltage
Parameter
Values Unit
-5 to 0 V
-5 to 0 V
Ref. : DSCHT46905334 - 29 Nov 05
2/13
Specifications subject to change without notice
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09