CHT3029-99F Datasheet, PDF (2/12 Pages) United Monolithic Semiconductors – DC-35GHz 4 Bit Digital Attenuator

CHT3029-99F
DC-35GHz 4 Bit Digital Attenuator
Electrical Characteristics
Tamb.= +25°C, V+ = +5V V- = -5V
Symbol
Parameter
Min Typ Max Unit
Freq Frequency range
DC
35 GHz
IL
Insertion Loss
4.5
dB
S11 Input Return Loss
12
dB
S22 Output Return Loss
14
dB
IP1dB Input power at 1dB gain compression
20
dBm
Dyn Dynamic
15
dB
LSB Attenuator elementary step
1
dB
Att_err Attenuation error
±0.5
dB
Rms_att_ RMS attenuation error
err
0.2
dB
Phivar Phase variation
-5/+20
°
Rms_phi RMS phase variation
var
12
°
Sw_t Switching time
15
ns
V+ Positive supply voltage
5
V
V-
Negative supply voltage
-5
V
Vctrl_L Control voltage low level
0
0.4
V
Vctrl_H Control voltage high level
2.4
7
V
I_V+ Positive supply DC current
5
mA
I_V- Negative supply DC current
5
mA
These values are representative measurements in test fixture with bonding wires of typically
0.2nH at RF accesses.
Absolute Maximum Ratings ⁽¹⁾
Tamb.= +25°C
Symbol
Parameter
Values
Unit
V+
Maximum positive voltage
8
V
V-
Minimum negative voltage
-8
mA
Ai
CTRL voltage (Vctrl _low, Vctrl _high)
-2 to 8
V
Pin
Maximum Input power
27
dBm
Tj
Junction temperature
175
°C
Ta
Operating temperature range
-40 to +85
°C
Tstg
Storage temperature range
-55 to +150
°C
(1) _{Operation of this device above anyone of these parameters may cause permanent}
damage.
Ref. : DSCHT30294330 - 26 Nov 14
2/12
Specifications subject to change without notice
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