CHR3693-99F_15 Datasheet, PDF (2/8 Pages) United Monolithic Semiconductors – 21-26.5GHz Integrated Down converter

CHR3693-99F
21-26.5GHz Integrated Down
converter
Electrical Characteristics
Tamb.= +25°C, Vdx=Vdl = +4.0V, Vgx=-0.9V, Vgm=-0.7V
Symbol
Parameter
Min Typ Max Unit
F_RF RF frequency range
21
26.5 GHz
F_LO LO frequency range
9
14 GHz
F_IF IF frequency range
DC
3.5 GHz
Gc Conversion gain
11
15
19 dB
NF Noise Figure for IF>0.1GHz
3.2
3.7 dB
P_LO LO Input power
Img Sup Image Suppression⁽²⁾
2
15
18
5 dBm
dBc
IIP3 Input IP3
-7
dBm
LO_RL LO return loss
-9.5
-7
dB
RF_RL
RF return loss (21 to 24GHz)
RF return loss (24 to 26.5GHz)
-9.5
-7
dB
-8
-6
dB
Id
Bias current⁽¹⁾ (Idl + Idx)
(1) _{Typically, Idl= 90mA, Idx=70mA}
(2) _{With external I/Q 90° hybrid coupler}
120 160 200 mA
These values are representative of on-wafer measurements that are made without bonding
wires at the RF ports. A bonding wire of typically 0.1 to 0.15nH will improve the matching at
the accesses.
Absolute Maximum Ratings ⁽¹⁾
Tamb.= +25°C
Symbol
Parameter
Values
Unit
Vd Maximum drain bias voltage
4.5
V
Id
Maximum drain bias current
230
mA
Vg Gate bias voltage
-2.0 to +0.4
V
P_RF Maximum RF input power ⁽²⁾
10
dBm
P_LO Maximum LO input power ⁽²⁾
10
dBm
Tch Maximum channel temperature
175
°C
Ta Operating temperature range
-40 to +85
°C
Tstg Storage temperature range
-55 to +150
°C
(1) _{Operation of this device above anyone of these parameters may cause permanent}
damage.
(2) _{Duration < 1s.}
Ref. : DSCHR36931192 - 11 Jul 11
2/8
Route Départementale 128, BP46 - 91401 ORSAY Cedex - FRANCE
Tel.: [phone] - Fax: [phone]
Specifications subject to change without notice