CHR3364-QEG_15 Datasheet, PDF (2/14 Pages) United Monolithic Semiconductors – 17-24GHz Down Converter

CHR3364-QEG
17-24GHz Down Converter
Electrical Characteristics
Tamb.= +25°C, VD = VDL = 4.0V
Symbol
Parameter
Min Typ Max Unit
F_RF
RF frequency range
F_LO
LO frequency range
17
24 GHz
6.5
14 GHz
F_IF
IF frequency range
DC
3.5 GHz
C_G
Conversion Gain
NF Noise Figure for IF>0.1GHz
11
dB
2.7
dB
Im_rej Image rejection ⁽¹⁾
17
dBc
P_LO
LO Input power
IIP3 Input IP3
0
dBm
1
dBm
2LO/RF 2LO leakage at RF port
-40
dBc
VD, VDL DC drain voltage
4.0
V
ID
Drain current on VD pin for LO buffer
245
mA
IDL
VGL
Drain current on VDL pin for LNA
LNA DC gate voltage ⁽²⁾
75
mA
-0.5
V
VGM Mixer DC gate voltage
-0.7
V
These values are representative of onboard measurements as defined on the drawing in
paragraph "Evaluation mother board".
(1) _{An external combiner 90° is required on I / Q.}
(2) _{Typical VGL value for IDL = 75mA}
See in paragraph “ biasing option” other possibility to optimise differently the performances
Absolute Maximum Ratings ⁽¹⁾
Tamb.= +25°C
Symbol
Parameter
Values
Unit
VD, VDL Drain bias voltage
5
V
ID+IDL Drain bias current
430
mA
VGL LNA Gate bias voltage
-2 to +0.4
V
VGM
P_RF
P_LO
Tj
Mixer Gate bias voltage
Maximum peak RF input power overdrive ⁽²⁾
Maximum peak LO input power overdrive ⁽²⁾
Junction temperature
-2 to +0.4
+10
+10
175
V
dBm
dBm
°C
Ta
Operating temperature range
-40 to +85
°C
Tstg Storage temperature range
-55 to +150
°C
(1) _{Operation of this device above anyone of these parameters may cause permanent}
damage.
(2) _{Duration < 1s.}
Ref. : DSCHR3364-QEG1192 - 11 Jul 11
2/14
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Specifications subject to change without notice