CHR2299-99F_15 Datasheet, PDF (2/12 Pages) United Monolithic Semiconductors – 40-44GHz Down converter

CHR2299-99F
40-44GHz Down converter
Electrical Characteristics
Tamb. = +25°C
Symbol
Parameter
F_RF RF frequency range
Min Typ Max Unit
40
44 GHz
F_LO LO frequency range
9.5
11.5 GHz
F_IF IF frequency range
DC
2.0 GHz
Gc
Conversion gain
21
dB
Im rej Image rejection
12
dB
P_LO LO Input power
0
dBm
NF
Noise figure for IF>0.1GHz
4.5
dB
IMD3
RL_RF
Intermodulation level at Pin_2tones = -30dBm
RF Return Loss
45
dBc
6
dB
RL_LO LO Return Loss
12
dB
P_4FLO Output power at 4LO_OUT port
-1
dBm
4xFLO_Lk 4xFLO leakage on RF port
-38
dBm
DX, DA LO multiplier, buffer and LNA biasing
4
V
GM
Mixer gate biasing
-0.6
V
G3
LO buffer gate biasing
-0.3
V
GX
Multiplier gate biasing
-1.2
V
IdT
Total biasing current
240
mA
Electrostatic discharge sensitive device observe handling precautions!
These values are representative of chip on board measurements with a 90° hybrid coupler.
Absolute Maximum Ratings (1)
Tamb.= +25°C
Symbol
Parameter
Values Unit
DX, DA LO multiplier, buffer and LNA biasing
4.5
V
IdT
Total biasing current
300
mA
GM, G3, GX Gate bias voltage
P_LO Maximum peak input LO power overdrive ⁽²⁾
Pin_RF Maximum peak input RF power overdrive ⁽²⁾
-2; +0.6
10
-5
V
dBm
dBm
Tj
Junction temperature
175
°C
Ta
Operating temperature range
-40 to +85 °C
Tstg
Storage temperature range
-55 to +155 °C
RTh
Thermal resistance, Tback side = +85 °C, Ptotal = 0.96 W
80
°C/W
(1) _{Operation of this device above anyone of these parameters may cause permanent damage}
(2) _{Duration < 1s}
Ref. : DSCHR22992012 - 19 Jan 12
2/12
Specifications subject to change without notice
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