CHR2296_15 Datasheet, PDF (2/6 Pages) United Monolithic Semiconductors – 36-40GHz Integrated Down Converter

CHR2296
36-40GHz Down Converter
Electrical Characteristics for Broadband Operation
Tamb = +25°C, Vd = 3.5V
Symbol
Parameter
Min Typ Max Unit
F_RF RF frequency range
F_LO LO frequency range
F_IF IF frequency range
G_c
Conversion gain ⁽¹⁾
NF Noise Figure, for IF>0.1GHz ⁽¹⁾
36
40 GHz
17
20 GHz
DC
1.5 GHz
9
11
dB
5
dB
P_LO LO Input power
Img Sup Image Suppression
+10
13
15
dBm
dBc
P1dB
LO
VSWR
Input power at 1dB gain compression
Input LO VSWR ⁽¹⁾
-10
2.0:1
dBm
RF
Input RF VSWR ⁽¹⁾
VSWR
3.0:1
Id
Bias current ⁽²⁾
110
mA
(1) On Wafer measurements
(2) Current source biasing network is recommended. Optimum performances for Idm =
50mA and Idl = 60mA
Absolute Maximum Ratings
Tamb. = 25°C (1)
Symbol
Parameter
Values
Unit
Vd
Maximum drain bias voltage
4.0
V
Id
Maximum drain bias current
200
mA
Vg
Gate bias voltage
-2.0 to +0.4
V
Vgd
Minimum negative gate drain voltage ( Vg – Vd)
-5
V
Pin
Maximum peak input power overdrive (2)
+15
dBm
Tch
Maximum channel temperature
175
°C
Ta
Operating temperature range
-40 to +85
°C
Tstg Storage temperature range
-55 to +125
°C
(1) Operation of this device above anyone of these parameters may cause permanent
damage.
(2) Duration < 1s.
Ref. : DSCHR22961192 - 11 Jul 11
2/6
Specifications subject to change without notice
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