CHR2296 Datasheet, PDF (2/5 Pages) United Monolithic Semiconductors – 36- 40GHz Integrated Down Converter

36-40 MFC Down Converter
CHR2296
Electrical Characteristics for Broadband Operation
Tamb = +25°C, Vd = 3.5V
Symbol
Parameter
F_RF
RF frequency range
F_LO
LO frequency range
F_IF
IF frequency range
G_c
Conversion gain (1)
NF Noise Figure (1)
P_LO
LO Input power
Img Sup Image Suppression
P1dB Input power at 1dB gain compression
LO VSWR Input LO VSWR (1)
RF VSWR Input RF VSWR (1)
Id
Bias current (2)
Min Typ Max Unit
36
40
GHz
17
20
GHz
0.25
1.5 GHz
11
dB
5
dB
+10
dBm
15
dBc
-10
dBm
2.0:1
3.0:1
110
mA
(1) On Wafer measurements
(2) Current source biasing network is recommended. Optimum performances for Idm= 50mA
and Idl= 60mA
Absolute Maximum Ratings
Tamb. = 25°C (1)
Symbol
Parameter
Values
Unit
Vd
Maximum drain bias voltage
4.0
V
Id
Maximum drain bias current
200
mA
Vg
Gate bias voltage
-2.0 to +0.4
V
Vgd
Minimum negative gate drain voltage ( Vg – Vd)
-5
V
Pin
Maximum peak input power overdrive (2)
+15
dBm
Tch
Maximum channel temperature
175
°C
Ta
Operating temperature range
-40 to +85
°C
Tstg
Storage temperature range
-55 to +125
°C
(1) Operation of this device above anyone of these parameters may cause permanent damage.
(2) Duration < 1s.
Ref. : DSCHR22962147 25-May-02
2/5
Specifications subject to change without notice
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