CHR2295_15 Datasheet, PDF (2/6 Pages) United Monolithic Semiconductors – 24-30GHz Integrated Down Converter

CHR2295
24-30GHz MFC Down Converter
Electrical Characteristics for Broadband Operation
Tamb = +25°C, Vd = 3.5V
Symbol
Parameter
Min Typ Max Unit
F_RF
RF frequency range
F_LO
LO frequency range
F_IF
IF frequency range
G_c
Conversion gain ⁽¹⁾
24
30 GHz
12
15 GHz
DC
1.5 GHz
8.5
11
dB
NF
Noise Figure, for IF>0.1GHz
3.5
dB
P_LO
LO Input power
Img Sup Image Suppression
10
15
17
dBm
dBc
P1dB
LO VSWR
RF VSWR
Input power at 1dB gain compression
Input LO VSWR ⁽¹⁾
Input RF VSWR ⁽¹⁾
-10
2.0:1
3.0:1
dBm
Id
Bias current ⁽²⁾
120
mA
(1) On Wafer measurements
(2) Current source biasing network is recommended. Optimum performances will be
achieved for Idm=50mA and Idl=70mA
Absolute Maximum Ratings
Tamb. = 25°C ⁽¹⁾
Symbol
Parameter
Values
Unit
Vd
Drain bias voltage
4.0
V
Id
Drain bias current
200
mA
Vg
Gate bias voltage
Pin
Maximum peak input power overdrive ⁽²⁾
-2.0 to +0.4
+15
V
dBm
Ta
Operating temperature range
-40 to +85
°C
Tstg Storage temperature range
-55 to +155
°C
(1) Operation of this device above anyone of these parameters may cause permanent
damage.
(2) Duration < 1s.
Ref.: DSCHR22951192 - 11 Jul 11
2/6
Specifications subject to change without notice
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