CHR2295 Datasheet, PDF (2/6 Pages) United Monolithic Semiconductors – 24-30GHz Integrated Down Converter

24-30GHz MFC Down Converter
CHR2295
Electrical Characteristics for Broadband Operation
Tamb = +25°C, Vd = 3.5V
Symbol
Parameter
F_RF
RF frequency range
F_LO
LO frequency range
F_IF
IF frequency range
G_c
Conversion gain (1)
NF Noise Figure
P_LO
LO Input power
Img Sup Image Suppression
P1dB Input power at 1dB gain compression
LO VSWR Input LO VSWR (1)
RF VSWR Input RF VSWR (1)
Id
Bias current (2)
Min Typ Max Unit
24
30
GHz
12
15
GHz
0.25
1.5 GHz
11
dB
3.5
dB
+10
dBm
17
dBc
-10
dBm
2.0:1
3.0:1
120
mA
(1) On Wafer measurements
(2) Current source biasing network is recommended. Optimum performances for Idm= 50mA
and Idl= 70mA
Absolute Maximum Ratings
Tamb. = 25°C (1)
Symbol
Parameter
Values
Unit
Vd
Drain bias voltage
4.0
V
Id
Drain bias current
200
mA
Vg
Gate bias voltage
-2.0 to +0.4
V
Pin
Maximum peak input power overdrive (2)
+15
dBm
Ta
Operating temperature range
-40 to +85
°C
Tstg
Storage temperature range
-55 to +155
°C
(1) Operation of this device above anyone of these parameters may cause permanent damage.
(2) Duration < 1s.
Ref. : : DSCHR22951201 -20-July-01
2/6
Specifications subject to change without notice
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