CHR2294_15 Datasheet, PDF (2/8 Pages) United Monolithic Semiconductors – 25-35GHz Single Side Band Mixer Self biased

CHR2294
25-35GHz SSB Mixer
Electrical Characteristics for Broadband Operation
Tamb = +25°C
Symbol
Parameter
FRF
FLO
FIF
Lc
PLO
2xLO Leak
Img Rej
P1dB
LO Match
RF Match
IF Match
Vd
Id
RF frequency range
LO frequency range
IF frequency range
Conversion Loss
LO Input power
2xLO Leakage (for PLO=+5dBm)
Image Rejection (1)
Input power at 1dB gain compression
LO VSWR
RF VSWR
IF VSWR
Drain bias voltage
Bias current
Min Typ Max Unit
25
35 GHz
11
19 GHz
DC
3.5 GHz
15
11
dB
+9
dBm
-35
dBm
15
dBc
+2.5
dBm
2.0:1
2.0:1
2.0:1
4
V
55
mA
(1) With external quadrature hybrid coupler (reference on request). The minimal value
depends on the quality of the external quadrature combiner.
A bonding wire of typically 0.1 to 0.15nH will improve the accesses matching.
Absolute Maximum Ratings
Tamb. = 25°C (1)
Symbol
Parameter
Values
Unit
Vd
Drain bias voltage
4.25
V
Id
Drain bias current
75
mA
Tj
Junction temperature
175
°C
Ta Operating temperature range (chip backside)
-40 to +85
°C
Tstg
Storage temperature range
-55 to +125
°C
(1) Operation of this device above anyone of these parameters may cause permanent damage.
Ref. : DSCHR22940197 - 16 Jul 10
2/8
Specifications subject to change without notice
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