CHR2293_05 Datasheet, PDF (2/4 Pages) United Monolithic Semiconductors – 20-24GHz Integrated Down Converter

20-24GHz MFC Down Converter
CHR2293
Electrical Characteristics for Broadband Operation
Tamb = +25°C, Vdm = Vdl = 3.5V, Vgm=-0.9V, Vgb=-0.7V, Vgx=-0.8V, Vga=-0.55V
Symbol
Parameter
F_RF
RF frequency range
F_LO
LO frequency range
F_IF
IF frequency range
G_c
Conversion gain (1)
NF
Noise Figure (1)
P_LO
LO Input power
Img Sup Image Suppression (2)
P1dB Input power at 1dB gain compression
LO VSWR Input LO VSWR (1)
RF VSWR Input RF VSWR (1)
Id
Bias current (3)
Min Typ Max Unit
20
9.25
0.25
13
+11
4
+10
17
-8
2.0:1
2.0:1
130
24
12.75
1.5
GHz
GHz
GHz
dB
dB
dBm
dBc
dBm
mA
(1) On Wafer measurements
(2) With external I/ Q combiner
(3) Current source biasing network is recommended. Optimum performances for Idm= 50mA
and Idl= 80mA
Absolute Maximum Ratings
Tamb. = 25°C (1)
Symbol
Parameter
Values
Unit
Vd
Drain bias voltage
4.0
V
Id
Drain bias current
200
mA
Vg
Gate bias voltage
-2.0 to +0.4
V
Pin
Maximum peak input power overdrive (2)
+15
dBm
Ta
Operating temperature range
-40 to +85
°C
Tstg
Storage temperature range
-55 to +155
°C
(1) Operation of this device above anyone of these parameters may cause permanent damage.
(2) Duration < 1s.
Ref.: DSCHR22935168 - 17 Jun 05
2/4
Specifications subject to change without notice
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