CHR2292_11 Datasheet, PDF (2/6 Pages) United Monolithic Semiconductors – 17-20GHz Integrated Down Converter

CHR2292
17-20GHz Down Converter
Electrical Characteristics for Broadband Operation
Tamb = +25°C, Vd = 3.5V
Symbol
Parameter
F_RF
RF frequency range
F_LO
LO frequency range
F_IF
IF frequency range
P_LO
LO Input power
G_c
Conversion gain (1)
NF Noise Figure, for IF>0.1GHz (1)
Img Sup Image Suppression (1)
P1dB RF Input power at 1dB gain compression (1)
LO VSWR Input LO VSWR (1)
RF VSWR Input RF VSWR (1)
Id
Bias current (2)
Min Typ Max Unit
17
20
GHz
7.5
10
GHz
DC
1.5
GHz
+10
dBm
13
dB
4.0
dB
15
dBc
-10
dBm
1.5:1
2.5:1
110
mA
(1) On Wafer measurements without bonding wires at the RF ports.
(2) Current source biasing network is recommended. Optimum performances for Idm=50mA and
Idl=60mA
Absolute Maximum Ratings
Tamb. = 25°C (1)
Symbol
Parameter
Values
Unit
Vd
Drain bias voltage
4.0
V
Id
Drain bias current
200
mA
Vg
Gate bias voltage
-2.0 to +0.4
V
Pin
Maximum peak input power overdrive (2)
+15
dBm
Ta
Operating temperature range
-40 to +85
°C
Tstg
Storage temperature range
-55 to +155
°C
(1) Operation of this device above anyone of these parameters may cause permanent damage.
(2) Duration < 1s.
Ref. DSCHR22921192 - 11 Jul 11
2/6
Specifications subject to change without notice
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