CHR2291_04 Datasheet, PDF (2/6 Pages) United Monolithic Semiconductors – 12-17GHz Integrated Down Converter

12-17GHz Integrated Down Converter _CHR2291
Electrical Characteristics for Broadband Operation
Tamb = +25°C, Vd = 3.5V ,Idl=50mA, Idm=50mA
Symbol
Parameter
F_RF
RF frequency range
F_LO
LO frequency range
F_IF
IF frequency range
G_c
Conversion gain (1)
NF
Noise Figure (1)
P_LO
LO Input power
Img Sup Image Suppression
P1dB Input power at 1dB gain compression
LO VSWR Input LO VSWR (1)
RF VSWR Input RF VSWR (1)
Id
Bias current (2)
Min Typ Max Unit
12
5.25
0.25
+10
3.5
+10
15
-8
2.0:1
2.0:1
100
17
7.75
1.5
GHz
GHz
GHz
dB
dB
dBm
dBc
dBm
mA
(1) On Wafer measurements
(2) Current source biasing network is recommended. Optimum performances for Idm= 50mA
and Idl= 50mA
Absolute Maximum Ratings
Tamb. = 25°C (1)
Symbol
Parameter
Values
Unit
Vd
Maximum drain bias voltage
4.0
V
Id
Maximum drain bias current
180
mA
Vg
Gate bias voltage
-2.0 to +0.4
V
Vdg
Maximum drain to gate voltage ( Vd– Vg)
+5
V
Pin
Maximum peak input power overdrive (2)
+15
dBm
Tch
Maximum channel temperature
175
°C
Ta
Operating temperature range
-40 to +85
°C
Tstg
Storage temperature range
-55 to +125
°C
(1) Operation of this device above anyone of these parameters may cause permanent damage.
(2) Duration < 1s.
Ref. : : DSCHR22914232 - 19 Aug 04
2/6
Specifications subject to change without notice
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