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CHP4511 Datasheet, PDF (2/8 Pages) United Monolithic Semiconductors – 6-18GHz Phase-shifter
CHP4511
6-18GHz Phase-shifter
Electrical Characteristics
Low level control voltage = -5V, High level control voltage = 0V
Pin = 5 dBm on the input, output on SPDT 1 or 2
Parameter
Fop
Operating frequency range
Phrange Phase shifter range
Phstep Phase step
S11
Input reflection coefficient
S22
Output reflection coefficient
S22off
Output reflection coefficient path
OFF
IL
Insertion loss
ISO
AV
Pio1dB
Poi1dB
Isolation between Output 1 and 2
Amplitude variation
Output Power @1dB compression
Output Power @1dB compression
Conditions Min
6
0
6 to 14GHz
15 to 18GHz
25
In => out1 or 2
out1 or 2 => in
Tamb = +25°C
typ.
to
22.5
Max
18
360
-6
-7
-15
Unit
GHz
deg.
deg
dB
dB
dB
13
15
35
-1.5 / +2.5
10
12
dB
dB
dB
dBm
dBm
Parameter Conditions average std dev
pk to pk
Unit
state 22.5°
22.5° ±5
< 3°
±6° / average
PPE
Peak Phase Error
state 45°
state 90°
45° ±5
90° ±5
< 6°
±10° / average deg
< 6°
±10° / average
state 180°
180° ±10
< 6°
±10° / average
Peak Phase Error (PPE) definition:
PPE(i) =measured_phase(S21)(i) – measured_phase(S21)(0) – theoretical_phase(i)
(i) = state ∈ [0,15]
Amplitude variation (AV) definition:
AV(i) = measured_dB(S21)(i) – measured_dB(S21)(0)
(i) = state ∈ [0,15]
Absolute Maximum Ratings
Tamb = +25°C
Operation of this device above anyone of these paramaters may cause permanent damage.
Symbol Parameter
Vgi
Phase shifter control voltage
Pin
Maximum peak input power overdrive (1)
Top
Operating temperature range
Tstg
Storage temperature range
(1) duration < 1s.
Values
-7 to +0.6
+30
-40 to +70
-55 to +125
Unit
V
dBm
°C
°C
Ref. : DSCHP45116216 - 04 Aug 06
2/8
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09