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CHM1298-99F_15 Datasheet, PDF (2/6 Pages) United Monolithic Semiconductors – 55-65GHz Single Side Band Mixer
CHM1298-99F
55-65GHz SSB Mixer
Electrical Characteristics for Broadband Operation
Tamb=+25°C, Vd = 3.5V
Symbol
Parameter
FRF RF frequency range
FLO LO frequency range
FIF
IF frequency range
Lc
Conversion Loss
PLO LO Input power
2xLO Leak 2xLO Leakage (for PLO = +5dBm)
Img Rej Image Rejection (1)
P1dB Input power at 1dB gain compression
P03 Input power at 3dB gain compression
IP3
LO Match
RF Match
Input 3rd order intercept point
LO Matching (2)
RF Matching (2)
IF Match IF Matching
Vg
Gate bias voltage
Id
Bias current with PLO = +10dBm (3)
Min Typ Max Unit
55
65 GHz
27.5
32.5 GHz
DC
5
GHz
12
dB
+10
dBm
-35
dBm
10
dBc
+0
dBm
+2
dBm
+8
dBm
2.0:1
2.0:1
2.0:1
-0.35
V
90
mA
(1) With external quadrature hybrid coupler (reference on request). The minimal value
depends on the quality of the external quadrature combiner.
(2) A bonding wire of typically 0.1 to 0.15nH will improve the accesses matching.
(3) Around 50mA without RF power
Absolute Maximum Ratings (1)
Tamb.=+25°C
Symbol
Parameter
Values
Unit
Vd Drain bias voltage
4.0
V
Id Drain bias current
150
mA
Vg Gate bias voltage
-2 to +0.4
V
PLO Maximum LO input power
Tj Junction temperature
+15
dBm
175
°C
Ta Operating temperature range
-40 to +85
°C
Tstg Storage temperature range
-55 to +150
°C
(1) Operation of this device above anyone of these parameters may cause permanent damage.
Ref. : DSCHM1298-1293 - 20 Oct 11
2/6
Specifications subject to change without notice
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