CHM1290-99F_15 Datasheet, PDF (2/6 Pages) United Monolithic Semiconductors – 20-30GHz Sub-Harmonic Mixer

CHM1290-99F
20-30GHz Sub-Harmonic Mixer
Electrical Characteristics
Tamb.= +25°C, Vd = +4.0V, Id=33mA
Symbol
Parameter
Min Typ Max Unit
F_RF
RF frequency range
F_LO
LO frequency range
20
30 GHz
10
15 GHz
F_IF
IF frequency range
DC
6 GHz
L_c
Conversion Loss
P_LO
LO Input power
10
12 dB
-4
8 dBm
2xLO
Leak
2xLO Leakage (for P_LO=-4dBm)
30
dBm
IP1dB Input power at 1dB gain compression
-3
0
3 dBm
LO Match LO Matching
2.0:1
RF Match RF Matching
2.0:1
IF Match IF Matching
2.0:1
Vd
DC voltage
4.0
V
Id
Bias current
33
mA
These values are representative of on-wafer measurements that are made without bonding
wires at the RF ports.
A bonding wire of typically 0.1 to 0.15nH will improve the matching at the accesses.
Absolute Maximum Ratings ⁽¹⁾
Tamb.= +25°C
Symbol
Parameter
Values
Unit
Vd
Drain bias voltage
5.0
V
Id
Drain bias current
Pin
Maximum peak input power overdrive ⁽²⁾
50
mA
10
dBm
Ta
Operating temperature range
-40 to +85
°C
Tstg
Storage temperature range
-55 to +150
°C
(1) _{Operation of this device above anyone of these parameters may cause permanent}
damage.
(2) _{Duration < 1s.}
Ref. : DSCHM12902355 - 20 Dec 12
2/6
Specifications subject to change without notice
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