CHM1191 Datasheet, PDF (2/6 Pages) United Monolithic Semiconductors – GaAs Monolithic Microwave IC

CHM1191
K band Mixer
Electrical Characteristics
Tamb. = 25°C
Symbol
Parameter
Min
Typ
Max
F_LO LO frequency range
22
24
F_IF
IF frequency range
1
3
Lc
Conversion loss @ P-LO = 7dBm (1)
7
P_LO LO input power
5
7
9
P-1dB Input 1dB compression
7
VSWR_LO LO port VSWR (50Ω) (2)
2.5:1
VSWR_RF RF port VSWR (50Ω) (2)
2.5:1
VSWR_IF RF port VSWR (50Ω) (2)
2.5:1
I_LO/RF LO/RF isolation
30
(1) On wafer measurements.
(2) Depends on the wire bonding conditions and on the external matching network.
Unit
GHz
GHz
dB
dBm
dBm
dBc
Absolute Maximum Ratings (1)
Tamb = +25°C
Symbol
Parameter
Values Unit
P_LO
Maximum peak input power overdrive at LO port (2)
10
dBm
P_RF
Maximum peak input power overdrive at RF port (2)
10
dBm
P_IF
Maximum peak input power overdrive at IF port (2)
10
dBm
Top
Operating temperature range
-40 to +85 °C
Tstg
Storage temperature range
-55 to +125 °C
(1) Operation of this device above anyone of these parameters may cause permanent damage.
(2) Duration < 1s
Ref. : DSCHM11919025
2/6
Specifications subject to change without notice
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