CHM1080-98F Datasheet, PDF (2/16 Pages) United Monolithic Semiconductors – 71-86GHz Single Side Band Mixer

CHM1080-98F
71-86GHz Single Side Band Mixer
Electrical Characteristics
Tamb.= +25°C, Vd = 3.5V
Symbol
Parameter
Min Typ Max Unit
F_RF
RF Frequency range
F_LO
LO Frequency range
F_IF
IF output Frequency
71
34.5
DC
6
86 GHz
44 GHz
12 GHz
P_LO
LO Input Power
Gc
Conversion Gain ⁽¹⁾
2
dBm
-11
dB
R_LO
LO Input return loss
10
dB
LO/ RF
LO Isolation on RF port
17
dB
2LO/ RF 2LO Isolation on RF port
16
dB
2LO/ RF
2LO Isolation on RF port with DC voltage
on I/ Q ( V_{_}I & V_Q) ⁽²⁾
40
dB
Im_rej
Image rejection ⁽¹⁾
15
dBc
IFin P1dB IF Input power @1dB comp.
0
dBm
RFin P1dB RF input power @1dB comp.
10
dBm
V_I & V_Q DC voltage on I & Q ⁽³⁾
Id
Drain current (Id LO Buffer) ⁽⁴⁾
-500
500 mV
90
mA
D
DC drain voltage (LO Buffer)
3.5
V
G
DC gate voltage (LO Buffer )
-2.2
V
GX
Mixer DC gate voltage
-2
V
(1) _{An external combiner 90° is required on I / Q.}
(2) _{In baseband configuration, a DC voltage on I & Q could be applied to cancel the 2LO leakage}
(3) _{V_I & V_Q should be tuned independently for each frequency, temperature}
(4) _{LO Buffer quiescent current 85mA}
These values are representative of on-wafer measurements that are made without bonding wires at
the RF & LO ports.
A ribbon (75 µm wide) connection at the RF and LO inputs (see chapter recommended chip assembly)
could improve the results.
Ref. : DSCHM10803329 - 25 Nov 13
2/16
Specifications subject to change without notice
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