CHE1270A Datasheet, PDF (2/6 Pages) United Monolithic Semiconductors – 12-40GHz Wide Band Detector

CHE1270a
12-40GHz Detector
Electrical Characteristics (1)
Tamb = +25°C, Vdc = +4.5V
Symbol
Parameter
F Frequency range
Dr Dynamic range (for Input Power detection)
IPd Input Power detection
Vdetect Voltage detection Vref – Vdet
from IPd_min to IPd_max
RL Return Loss (12 – 14.5GHz)
Return Loss (15 – 40GHz)
Vdc Bias voltage
Idc Bias current
Min Typ Max Unit
12
40 GHz
30
dB
-15
15 dBm
10
to
mV
2000
-8
dB
-10
dB
4.5
V
70
µA
(1) These values are representative of on-wafer measurements that are made without bonding wires
at the RF ports but with 27kΩ resistor in parallel on pads Vdet and Vref.
Absolute Maximum Ratings (1)
Tamb = +25°C
Symbol
Parameter
Vdc
Bias voltage
IPd_max Maximum Input power
Top
Operating temperature range
Tstg Storage temperature range
Values
6
18
-40 to +85
-55 to +125
Unit
V
dBm
°C
°C
(1) Operation of this device above anyone of these paramaters may cause permanent damage.
Ref. : DSCHE1270a8205 - 25 Jun 08
2/6
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: [phone] - Fax : [phone]