CHE1260-QAG_15 Datasheet, PDF (2/14 Pages) United Monolithic Semiconductors – 10-27GHz Bidirectionnal Detector

CHE1260-QAG
10-27GHz Detector
Electrical Characteristics
Tamb = +25°C, VDC = +4.5V (on DC_I and DC_R)
Symbol
Parameter
Min Typ Max Unit
F
Frequency range
10
27
GHz
IL
Insertion Loss
1
dB
Cd
Coupler Directivity
15
dB
Dr
Pd
Vdetect_I
Vdetect_R
RLin
Dynamic Range :
10 - 12GHz
12 - 24GHz
24 - 27GHz
Power detection :
10 - 17GHz
17 - 21GHz
21 - 24GHz
24 - 27GHz
Voltage detection from transmitted power
Vref_R – Vdet_I
From Pd_min to Pd_max
Voltage detection from reflected power
Vref_I – Vdet_R
From Pd_min to Pd_max
Input return loss
15
dB
8
dB
15
dB
-1
dBm
-3
dBm
-6
dBm
-8
dBm
20
3500 mV
20
3500 mV
-12
-9
dB
RLout Output return loss
-12
-9
dB
VDC
Bias Voltage
4.5
V
IDC
Bias Current (on ports DC_I or DC_R)
25
33
45
µA
These values are representative of on board measurements as defined in notes, with 100kΩ resistor in
parallel on pads Vdet_I, Vref_I, Vdet_R and Vref_R (see notes).
Absolute Maximum Ratings (1)
Tamb = +25°C
Symbol
Parameter
Values
Unit
VDC Bias voltage (on ports DC_I and DC_R)
6
V
Top Operating temperature range
-40 to +85
°C
Tstg Storage temperature range
-55 to +125
°C
P_max ^{Maximum power}
(for transmitted and/or reflected power)
30
dBm
(1) Operation of this device above anyone of these paramaters may cause permanent damage.
Thermal datas: Pdc_max = 50µA x 1V = 50µW and PRF_max = 20mW
Tj_max = 175°C for maximum ratings
Ref. : DSCHE1260QAG0200 - 19 Jul 10
2/14
Route Départementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: [phone] - Fax: [phone]
Specifications subject to change without notice