CHA7114_15 Datasheet, PDF (2/8 Pages) United Monolithic Semiconductors – X Band High Power Amplifier

CHA7114
X-band High Power Amplifier
Electrical Characteristics
Tamb = 25°C, Vd = 8V, Id (Quiescent) = 2A, Pulse wi dth = 25µs, Duty cycle=10%
Symbol
Parameter
Min
Typ Max Unit
Fop
Operating frequency
8.5
11.5 GHz
G
Small signal gain
17.5
20
23
dB
G_T
Small signal gain variation versus
temperature
-0.033
dB/°C
RLin
Input Return Loss
8
10
dB
RLout Output Return Loss
6
8
dB
Psat
Saturated output power
39.8
dBm
Psat_T
Saturated output power variation
versus temperature
-0.008
dB/°C
P_4dBcp Output power @ 4dBcp (2)
38
39
dBm
PAE_4dBcp Power Added Efficiency @ 4dBcp
36
42
%
Id
Supply drain current
2.3
2.6
A
Vd1, Vd2 Drain supply voltage (2)
8.0
8.5
V
Id_q
Supply quiescent drain current (1)
2.0
A
Vg1, Vg2 Gate Power supply voltage
-4.0
V
Top
Operating temperature range
-40
+80
°C
(1) Parameter to be adjusted by tuning of Vg
(2) 0.5V variation on Vd leads to around 0.4dB variation of the output power (impact on
robustness see Maximum ratings)
Absolute Maximum Ratings (1)
Tamb = 25°C
Symbol
Cmp
Vd
Id
Id_sat
Vg
Tj
Tstg
Parameter
Compression level (2)
Drain Power supply voltage (3)
Drain Power supply quiescent current
Drain Power supply current in saturation
Gate Power supply voltage
Maximum junction temperature (4)
Storage temperature range
Values
Unit
6
dB
10
V
2.5
A
3
A
-8
V
175
°C
-55 to +125 °C
(1) Operation of this device above anyone of these parameters may cause permanent
damage.
(2) For higher compression the level limit can be increased by decreasing the voltage
Vd using the rate 0.5V/dBcp
(3) Without RF input power
(4) Equivalent Thermal Resistance to Backside: 5.6°C/W for backside temp. of 80°C.
[ Junction Temperature comes from: Tj = Tbackside + ETRB x (Dissipated Power)
Where ETRB stands for Equivalent Thermal Resistance to Backside. ]
Ref. : DSCHA7114-0197 - 16 Jul 10
2/8
Route Départementale 128, BP46 - 91401 ORSAY Cedex - FRANCE
Tel.: [phone] - Fax: [phone]
Specifications subject to change without notice