CHA6252-QFG_15 Datasheet, PDF (2/12 Pages) United Monolithic Semiconductors – 13-15.5GHz Power Amplifier

CHA6252-QFG
13-15.5GHz Power Amplifier
Electrical Characteristics
Tamb.= +25°C, Vd = +7.0V
Symbol
Parameter
Min Typ Max Unit
Freq Frequency range
13
15.5 GHz
Gain Linear Gain
22
dB
G_T Linear gain variation versus Temp
-0.05
dB/°C
RL_in Input Return Loss
-18
dB
RL_out Output Return Loss
-11
dB
OP1dB Output power @1dB compression point
32.5
dBm
Psat Saturated output power
35
dBm
TOI Output TOI @10 dB back off of OP1dB
41
dBm
PAE Power added efficiency @1dB compression
22
%
Idq Quiescent Drain current
1.1
A
Vg
Gate voltage
-0.45
V
These values are representative of onboard measurements as defined on the drawing in
paragraph "Evaluation mother board".
Absolute Maximum Ratings ⁽¹⁾
Tamb.= +25°C
Symbol
Parameter
Values
Unit
Vd
Drain bias voltage
7.5V
V
Id
Drain bias current
2
A
Vg
Gate bias voltage
-2 to +0
V
Pin Input continuous power
Tj
Junction temperature ⁽²⁾
15
dBm
175
°C
Ta
Operating temperature range
-40 to +85
°C
Tstg Storage temperature range
-55 to +150
°C
(1) _{Operation of this device above anyone of these parameters may cause permanent}
damage.
Typical Bias Conditions
Tamb.= +25°C
Symbol
Pad N^o
VDx
15, 26, 28, 30,
32
VGx
9, 10, 12, 14
Parameter
DC Drain voltage
DC Gate voltage tuned for Idq= 1.1A
Values Unit
7
V
-0.45
V
Ref. : DSCHA6252-QFG2355 - 20 Dec 12
2/12
Specifications subject to change without notice
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