CHA4861-QGG Datasheet, PDF (2/14 Pages) United Monolithic Semiconductors – 6-11 GHz Variable Gain Amplifier

CHA4861-QGG
6-11 GHz Variable Gain Amplifier
Electrical Characteristics
Tamb.= +25°C, Vd = +4.5V
Symbol
Parameter
Min Typ Max Unit
Freq Frequency range
6
11 GHz
Gain Linear Gain without control
23
dB
NF Noise Figure at maximum gain
9
dB
RLin Input return loss
-10
dB
RLout Output return loss
-12
dB
OIP3 Output 3^rd order intercept point @ max. gain
29
dBm
OIP3 Output 3^rd order intercept point @ min. gain
26
dBm
P1dB Power at 1dB compression @ all gain
24
dBm
ΔG Gain control range
20
dB
VG12, DC gate voltage stage 1,2, 3
VG3
-1.3
V
GC DC gain control voltage (GC1 & GC2)
-2.0
0
V
Vd
DC drain voltage
4.5
V
Id
Quiescent drain current (1)
160
mA
These values are representative of onboard measurements.
(1) Id not affected by GC
Absolute Maximum Ratings ⁽¹⁾
Tamb.= +25°C
Symbol
Parameter
Values
Unit
Vd
Drain bias voltage
5V
V
Id
Drain bias current
230
mA
VG12-VG3 Gate bias voltage
-2 to +0.4
V
GC1-GC2 Gain control voltage
Pin
Maximum peak input power overdrive ⁽²⁾
-2.5 to +0.6
+7
V
dBm
Tj
Junction temperature
175
°C
Ta
Operating temperature range
-40 to +85
°C
Tstg
Storage temperature range
-55 to +150
°C
(1) _{Operation of this device above anyone of these parameters may cause permanent}
damage.
(2) _{Duration < 1s.}
Ref. : DSCHA4861-QGG2262 - 18 Sep 12
2/14
Specifications subject to change without notice
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: [phone] - Fax: [phone]