CHA4253AQQG_15 Datasheet, PDF (2/14 Pages) United Monolithic Semiconductors – 17- 24GHz Medium Power Amplifier

CHA4253aQQG
17- 24GHz Medium Power Amplifier
Electrical Characteristics
Tamb.= +25°C, Vd = +4.0V
Symbol
Parameter
Min Typ Max Unit
Freq Frequency range
17.0
24.0 GHz
Gain Linear Gain
23
dB
ΔG
OTOI
Gain variation in temperature
3^rd order Intercept point
0.04
dB/°C
33
dBm
P_-1dB Output power @ 1dB compression
24
dBm
Psat Saturated Output Power
24.5
dBm
RLin Input Return Loss
12
dB
RLout Output Return Loss
15
dB
NF Noise figure
7.5
dB
Id
Quiescent Drain current
230
mA
Vg Gate voltage
-0.7
V
These values are representative of onboard measurements as defined on the drawing in
paragraph "Evaluation mother board".
Absolute Maximum Ratings ⁽¹⁾
Tamb.= +25°C
Symbol
Parameter
Values
Unit
Vd Drain bias voltage
6V
V
Id
Drain bias quiescent current
300
mA
Vg Gate bias voltage
-2 to +0.4
V
Pin Maximum input power
Tj
Junction temperature ⁽²⁾
10
dBm
175
°C
Ta
Operating temperature range
-40 to +85
°C
Tstg Storage temperature range
-55 to +150
°C
(1) _{Operation of this device above anyone of these parameters may cause permanent}
damage.
(2) _{Duration < 1s.}
Typical Bias Conditions
Tamb.= +25°C
Symbol Pad N^o
Vd12
6
Vd34
7
Vg12
16
Vg34
14
Parameter
DC Drain voltage 1^st, 2^nd stage
DC Drain voltage 3^rd, 4^th stage
DC Gate voltage 1^st & 2^nd stage
DC Gate voltage 3^rd & 4^th stage
Values Unit
4
V
4
V
-0.7
V
-0.7
V
Ref. : DSCHA4253aQQG4346 - 12 Dec 14
2/14
Specifications subject to change without notice
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