CHA3513_08 Datasheet, PDF (2/10 Pages) United Monolithic Semiconductors – 6-18GHz 3 bit Digital Variable Amplifier

CHA3513
6-18GHz Digital Variable Amplifier
Electrical Characteristics on wafer
Tamb = +25°C
Vd = Pads B, D, F = 4.5V, Vg = Pads A, C, E tuned for Id = 300mA
Symbol
Parameter
Fop Operating frequency range (1)
Min Typ Max Unit
6
18
GHz
G
Small signal gain @ Attenuator state 0dB (1)
6-17GHz
17
19
dB
17-18GHz
15
16
dB
ATT bit Attenuator bit: State 5dB
4.5
5
6.5
dB
State 10 dB 1
9.5
10
12
dB
State 10dB 2
9.5
10
12
dB
ATT dyn Attenuator range with 3bit
25
dB
Is
Small signal gain @ Attenuator state 0dB &
switch OFF (1)
-35
dB
P1dB Output power at 1dB compression @ Attenuator
18
dBm
state 0dB (1)
Psat Saturated Output power @ Attenuator state 0dB
20
dBm
(1)
NF Noise figure @ Attenuator state 0dB
12
dB
RL_IN Input Return Loss all attenuator states
-15
-9
dB
RL_OUT Output Return Loss all attenuator states & switch
ON
-15
-9
dB
Vd Drain bias DC voltage (Pads B, D, F)
4.5
V
Id
Bias current @ small signal
300
350
mA
Vc
Control voltage for Attenuator bits & SPST switch -5
0
V
(1) These values are representative of on-wafer measurements that are made without bonding
wires at the RF ports.
Ref. : DSCHA3513-8144 - 23 May 08
2/10
Specifications subject to change without notice
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