CHA2395 Datasheet, PDF (2/6 Pages) United Monolithic Semiconductors – 36-40GHz Low Noise Very High Gain Amplifier

CHA2395
36-40GHz Low Noise Amplifier
Electrical Characteristics
Tamb = +25°C, Vd= 3.5V
Symbol
Parameter
Fop Operating frequency range (1)
Min Typ Max Unit
36
40 GHz
G Small signal gain (1)
25
30
dB
∆G Small signal gain flatness (1)
±1.5
dB
∆Gsb Gain ripple over 40MHz ( within -30 ; +75°C )
0.5 dBpp
Is Reverse isolation (1)
35
40
dB
P1dB Output power at 1dB gain compression
8
10
dBm
VSWRin Input VSWR (1)
2.5:1 3.0:1
VSWRout Output VSWR (1)
2.5:1 3.0:1
NF Noise figure (2)
3.0 4.0 dB
Vdc DC Voltage
Vd
Vg
3.5
4
V
-2
+0.4 V
Id Bias current (2)
90
mA
(1) These values are representative of on-wafer measurements that are made without bonding
wires at the RF ports.
(2) 90 mA is the typical bias current used for on wafer measurements, with adjusting Vg1,2
voltage for optimum noise figure and Vg3,4 adjusting for maximum gain.
Absolute Maximum Ratings
Tamb. = 25°C (1)
Symbol
Parameter
Values
Unit
Vd
Drain bias voltage
4.5
V
Vg
Gate bias voltage
-2.0 to +0.4
V
Vdg
Maximum drain to gate voltage (Vd - Vg)
+5.0
V
Id
Drain bias current
200
mA
Pin
Maximum peak input power overdrive (2)
+15
dBm
Ta
Operating temperature range
-40 to +85
°C
Tstg Storage temperature range
-55 to +125
°C
(1) Operation of this device above anyone of these parameters may cause permanent damage.
(2) Duration < 1s.
Ref. : DSCHA23952240 -28-Aug.-02
2/6
Specifications subject to change without notice
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