CHA2157_07 Datasheet, PDF (2/6 Pages) United Monolithic Semiconductors – 55-60GHz Low Noise / Medium Power Amplifier

CHA2157
55-60GHz Low Noise Amplifier
Electrical Characteristics for Broadband Operation
Tamb = +25°C, Vd = 3.3V
Symbol
Parameter
Fop Operating frequency range (1)
Min Typ Max Unit
55
60
GHz
G
Small signal gain (1)
8
10
12
dB
∆G Small signal gain flatness (1)
±1.0 ±2.0
dB
Is
Reverse isolation (1)
20
25
dB
NF Noise figure
3.5
4.5
dB
P1dB CW output power at 1dB compression (1)
13
15
dBm
VSWRin Input VSWR (1)
3.0:1 6.0:1
VSWRout Output VSWR (1)
3.0:1 6.0:1
Vd
DC Voltage
3.3
3.8
V
Id
Bias current
80
150
mA
(1) These values are representative for CW on-wafer measurements that are made without
bonding wires at the RF ports.
A wire bond of typically 0.1 to 0.15nH will improve the input and output matching.
Absolute Maximum Ratings
Tamb. = 25°C (1)
Symbol
Parameter
Values
Unit
Vd
Drain bias voltage
4.0
V
Id
Drain bias current
150
mA
Vg
Gate bias voltage
-2.0 to +0.4
V
Pin
Maximum peak input power overdrive (2)
+15
dBm
Ta
Operating temperature range
-40 to +85
°C
Tstg
Storage temperature range
-55 to +155
°C
(1) Operation of this device above anyone of these parameters may cause permanent damage.
(2) Duration < 1s.
Ref. : DSCHA21577150 - 30 May 07
2/6
Specifications subject to change without notice
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