CHA2093 Datasheet, PDF (2/8 Pages) United Monolithic Semiconductors – 20-30GHz Low Noise Amplifier

CHA2093
20-30GHz Low Noise Amplifier
Electrical Characteristics
Tamb = +25°C, Vd = +4V Id=45mA
Symbol
Parameter
Fop Operating frequency range
G
Gain (1)
∆G
Gain flatness (1)
NF Noise figure (1)
VSWRin Input VSWR (1)
VSWRout Ouput VSWR (1)
IP3
P1dB
3rd order intercept point
Output power at 1dB gain compression
Id
Drain bias current
Min Typ Max Unit
20
30 Ghz
13
15
dB
± 0.5 ± 1.0 dB
2.2
3.0
dB
3.0:1
3.0:1
20
dBm
13
dBm
50
mA
(1) These values are representative of on-wafer measurements that are made without
bonding wires at the RF ports.When the chip is attached with typical 0.15nH input and
output bonding wires , the indicated parameter values should be improved.
Absolute Maximum Ratings (1)
Tamb = +25°C
Symbol
Parameter
Values
Unit
Vd
Drain bias voltage
4.0
V
Pin
Maximum peak input power overdrive (2)
+15
dBm
Top Operating temperature range
-40 to +85
°C
Tstg Storage temperature range
-55 to +125
°C
(1) Operation of this device above anyone of these paramaters may cause permanent damage.
(2) Duration < 1s.
Ref. : DSCHA20939042
2/8
Specifications subject to change without notice
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