CHA2066_04 Datasheet, PDF (2/8 Pages) United Monolithic Semiconductors – 10-16GHz Low Noise Amplifier

CHA2066
10-16GHz Low Noise Amplifier
Electrical Characteristics
Tamb = +25°C, Vd = +4V
Symbol
Parameter
Fop Operating frequency range
G
Gain (1)
∆G Gain flatness (1)
NF
Noise figure (1)
VSWRin Input VSWR (1)
VSWRout Ouput VSWR (1)
IP3
P1dB
Id
3rd order intercept point
Output power at 1dB gain
compression
Drain bias current (2)
Test
Condi
Min
tions
10
14
Typ Max
16
16
± 0.5 ± 1.0
2.0 2.5
3.0:1
3.0:1
20
10
45
Unit
Ghz
dB
dB
dB
dBm
dBm
mA
(1) These values are representative of on-wafer measurements that are made without bonding wires at
the RF ports. When the chip is attached with typical 0.3nH input and output bonding wires, the indicated
parameter values should be improved.
(2) This current is the typical value from the low noise low consumption biasing ( B & D grounded ).
Absolute Maximum Ratings (1)
Tamb = +25°C
Symbol
Parameter (1)
Values
Unit
Vd
Drain bias voltage (3)
4.5
V
Pin
Maximum peak input power overdrive (2)
+15
dBm
Top
Operating temperature range
-40 to +85
°C
Tstg Storage temperature range
-55 to +125
°C
(1) Operation of this device above anyone of these paramaters may cause permanent damage.
(2) Duration < 1s.
(3) For a typical biasing circuit : B & D grounded. See chip biasing option page 7/8.
Ref. : DSCHA20664281 - 07 Oct 04
2/8
Specifications subject to change without notice
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