DBES105A_09 Datasheet, PDF (1/4 Pages) United Monolithic Semiconductors – Flip-Chip Dual Diode

DBES105a
RoHS COMPLIANT
Flip-Chip Dual Diode
GaAs Diode
Description
The DBES105a is a dual Schottky diode based
on a low cost 1µm stepper process including a
bump technology. The parasitic inductances are
reduced and result in a very high operating
frequency.
This flip-chip dual diode has been designed for
high performance mixer applications.
Main Features
■ High cut-off frequencies: 3THz
■ High breakdown voltage: < -5V@ 20µA
■ Good ideality factor: 1.2
■ Low parasitic inductances
■ Low cost technology
■ Dimensions : 0.53 x 0.23 x 0.1mm
30
30
100
diameter 20
160
230
Main Characteristics
Tamb. = 25°C
Symbol
Parameter
Wu Gate Width
Fco Cut-off frequency
n
Ideality factor
BVak Anode-cathode break-down voltage
Typ
Unit
5
µm
3
THz
1.2
< -5
V
ESD Protection: Electrostatic discharge sensitive device. Observe handling precautions!
Ref. : DSDBES105a6354 - 20 Dec 06
1/4
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel.: [phone] - Fax: [phone]