CHZ180A-SEB Datasheet, PDF (1/14 Pages) United Monolithic Semiconductors – 180W L-Band HPA

CHZ180A-SEB
180W L-Band HPA
GaN HEMT on SiC in SEB Package
Description
The CHZ180A-SEB is an input matched and
output pre-matched packaged Gallium Nitride
High Electron Mobility Transistor. It allows
broadband solutions for a variety of RF
power applications in L-band. It is well suited
for pulsed radar application.
The CHZ180A-SEB is proposed on a 0.5µm
gate length GaN HEMT process. It is based
on Quasi-MMIC technology.
It is available in a hermetic flange ceramic
metal power package providing low parasitic
and low thermal resistance.
Main Features
■ Wide band capability: 1.2 – 1.4GHz
■ Pulsed operating mode
■ High power: > 180W
■ High PAE: up to 53%
■ DC bias: V_DS = 45V @ I_{D_Q} = 1.3A
■ MTTF > 10⁶ hours @ Tj = 200°C
■ RoHS Hermetic Flange Ceramic package
V_DS = 45V, I_{D_Q} = 1.3A, Pin = 39dBm
Pulsed mode (100µs-10%)
60
25
58
Pulsed Mode
24
56
23
54
POUT
22
52
21
50
20
48
19
PAE
46
18
44
17
42
16
40
15
38
Gain
14
36
13
34
12
32
11
30
1
10
1.1
1.2
1.3
1.4
1.5
1.6
Frequency (GHz)
Performances given at the connector access
planes.
Main Electrical Characteristics
Tamb. = +25°C, Pulsed mode
Symbol
Parameter
Freq Frequency range
G_SS Small Signal Gain
P_SAT Saturated Output Power
PAE_max Max Power Added Efficiency
I_DSAT Saturated Drain Current
Min Typ Max Unit
1.2
1.4 GHz
20
dB
52
53
54 dBm
45
52
%
9
A
Ref. : DSCHZ180A-SEB4065 - 06 Mar 14
1/14
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: [phone] - Fax: [phone]