CHZ050A-SEA_15 Datasheet, PDF (1/12 Pages) United Monolithic Semiconductors – 50W C Band HPA

CHZ050A-SEA
50W C Band HPA
GaN HEMT on SiC
Description
The CHZ050A-SEA is an input and output
internally-matched packaged Gallium Nitride
High Electron Mobility Transistor. It allows
broadband solutions for a variety of RF
power applications in C-band. It is proposed
in a low parasitic, low thermal resistance
package, and doesn’t require any external
matching circuitry.
The CHZ050A-SEA is well suited for pulsed
radar and satcom applications. It is
developed on a 0.5µm gate length GaN
HEMT process, and is available as a
hermetic flange ceramic metal power
package
Main Features
■ Bandwidth : 5.2-5.8 GHz
■ Pulsed operating mode
■ High power: > 50W
■ High Efficiency: up to 45%
■ DC bias: V_DS =50V @ I_{D_Q} =400mA
■ MTTF > 10⁶ hours @ Tj=200°C
■ 50 input and output matched
■ External input/output bias tees required
■ RoHS Flange Ceramic package
V_DS = 50V, I_{D_Q} = 400mA
Pulse mode (25µs-10%) Pin = 35dBm
PAE
Gain
Pout
Intrinsic performances of the packaged device
Main Electrical Characteristics
Tcase= +25°C, Pulsed mode, F = 5.2-5.8 GHz, V_DS=50V, I_{D_Q}=400mA
Symbol
Parameter
Min Typ
G_SS Small Signal Gain
13
15
P_SAT
PAE
Saturated Output Power
Max Power Added Efficiency
50
60
40
45
G_{PAE_MAX} Associated Gain at Max PAE
12
Max Unit
dB
W
%
dB
Ref. : DSCHZ050A-SEA4176 - 25 jun 14
1/12
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: [phone] - Fax: [phone]