CHZ015A-QEG Datasheet, PDF (1/14 Pages) United Monolithic Semiconductors – 15W L-Band Driver

CHZ015A-QEG
15W L-Band Driver
GaN HEMT on Sic in SMD leadless package
Description
The CHZ015A-QEG is an input matched
packaged Gallium Nitride High Electron
Mobility Transistor.
It allows broadband solutions for a variety of
RF power applications in L-band. The circuit
is well suited for pulsed radar application.
The CHZ015A-QEG is proposed on a 0.5µm
gate length GaN HEMT process. It is based
on Quasi MMIC technology.
It is supplied in RoHS compliant SMD
package.
Main Features
■ Wide band capability: 1.2 - 1.4GHz
■ Pulsed operating mode
■ High power: > 15W
■ High PAE: up to 55%
■ DC bias: V_DS=45V @ I _{D_Q}=100mA
■ Low cost package: 24L-QFN4x5
■ MTTF > 10⁶ hours @ Tj=200°C
V_DS = 45V, I_{D_Q} = 100mA, Pin = 28dBm
Pulsed mode (25µs-10%)
Performances on the connector access planes
Main Electrical Characteristics
Tamb.= +25°C, pulsed mode
Symbol
Parameter
Freq Frequency range
G_SS
P_OUT
PAE
Small Signal Gain
Output Power
Max Power Added Efficiency
Id_SAT Saturated Drain Current
Min Typ Max Unit
1.2
1.4 GHz
18
19.5
dB
39.5 41.5 43 dBm
45
55
%
650
mA
Ref. : DSCHZ015A-QEG3354 - 20 Dec 13
1/14
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: [phone] - Fax: [phone]