CHV2411AQDG_15 Datasheet, PDF (1/12 Pages) United Monolithic Semiconductors – Fully Integrated HBT K-band VCO

CHV2411aQDG
Fully Integrated HBT K-band VCO
GaAs Monolithic Microwave IC in QFN package
Description
The CHV2411aQDG is a monolithic
multifunction for frequency generation. It
integrates an X-band “push-push”
oscillator with frequency control (VCO)
thanks to base-collector diodes, used as
varactors, a K-band buffer amplifiers and
a divider by 8. The VCO is fully
integrated on HBT process. All the active
devices are internally self-biased.
The circuit is fully integrated on InGaP
HBT process: 2µm emitter length, via
holes through the substrate and high Q
passive elements.
The chip is delivered in a 24 Leads
RoHS compliant QFN4x4 package.
Main Features
■ K-band VCO+K bufffers+Prescaler/8
■ Fully integrated VCO
(no need for external resonator)
■ Low phase noise
■ High temperature range
■ High frequency stability
■ On chip self-biased devices
■ Standard SMD package: 24L-QFN4x4
Main Characteristics
U^UM^MS^S
V_YA2_Y34_W61^68W 1⁷⁸A^AG
YYWW
Plastic package
+V
V_Tune
x2
2
÷8
IF_out
RF_out
RF Output Frequency vs Vtune
26.0
25.6
25.2
24.8
-40°C
+25°C
24.4
+105°C
24.0
23.6
23.2
22.8
22.4
22.0
1.0
2.0
3.0
4.0
5.0
6.0
V_Tune (V)
Symbol
Parameter
Min Typ Max Unit
F_out Output frequency range on RF_out port
24.0 24.125 24.25 GHz
F_vco VCO frequency
F_out/2
GHz
IF_out Output Intermediate frequency
F_out/16
GHz
P_out Output power on RF_out port
13
16
dBm
PFI Output power at Intermediate freq. (IF)
-3
0
dBm
PN SSB Phase Noise @F_out@100KHz
-90
-80 dBc/Hz
ESD Protections: Electrostatic discharge sensitive device observe handling precautions!
Ref. : DSCHV2411aQDG3232 - 20 Aug 13
1/12
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: [phone] - Fax: [phone]