CHV1206-98F Datasheet, PDF (1/10 Pages) United Monolithic Semiconductors – Low Phase Noise C band HBT VCO

CHV1206-98F
Low Phase Noise C band HBT VCO
GaAs Monolithic Microwave IC
Description
The CHV1206-98F is a low phase noise C band
HBT voltage controlled oscillator that integrates
Vc
negative resistor, varactors and buffer amplifiers. It
provides an excellent phase noise of 100dBc/Hz at ^VT
100kHz offset.
It is designed for a wide range of applications, from
space to commercial communication systems.
The circuit is fully integrated on InGaP HBT
process: 2µm emitter length, via holes through the
substrate and high Q passive elements.
It is available in chip form.
RF out
Main Features
■ C-band VCO + C buffers
■ Fully integrated VCO
(no need for external resonator)
■ Low phase noise
■ High frequency stability
■ On chip self-biased devices
■ Available in bare die
■ Chip size: 2.77x2.77mm²
6.6
6.4
6.2
6
5.8
5.6
5.4
5.2
5
0
2
4
6
8
10
Vtune (Volts)
Main Electrical Characteristics
Tamb.= +25°C
Symbol
Parameter
F_out Output frequency range on RF_out port
P_out Output power on RF_out port
PN_100 SSB Phase Noise @ F_out @ 100KHz offset
Min Typ Max Unit
5.35
6.1 GHz
8.5
dBm
100
dBc/Hz
Ref. : DSCHV12066212 -July the 29th, 2016
1/10
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: [phone] - Fax: [phone] - www.ums-gaas.com