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CHV1203-98F Datasheet, PDF (1/10 Pages) United Monolithic Semiconductors – Low Phase Noise S band HBT VCO
CHV1203-98F
Low Phase Noise S band HBT VCO
GaAs Monolithic Microwave IC
Description
The CHV1203-98F is a low phase noise S band
HBT voltage controlled oscillator that integrates
Vc
negative resistor, varactors and buffer amplifiers. It
provides an excellent phase noise of 108dBc/Hz at VT
100kHz offset.
It is designed for a wide range of applications, from
space to commercial communication systems.
The circuit is fully integrated on InGaP HBT
process: 2µm emitter length, via holes through the
substrate and high Q passive elements.
It is available in chip form.
RF out
Main Features
■ S-band VCO + S buffers
■ Fully integrated VCO
(no need for external resonator)
■ Low phase noise
■ High frequency stability
■ On chip self-biased devices
■ Available in bare die
■ Chip size: 2.77x2.77mm²
3.3
3.2
3.1
3
2.9
2.8
2.7
2.6
2.5
2.4
2.3
0
2
4
6
8
10
Vtune (Volts)
Main Electrical Characteristics
Tamb.= +25°C
Symbol
Parameter
F_out Output frequency range on RF_out port
P_out Output power on RF_out port
PN_100 SSB Phase Noise @ F_out @ 100kHz offset
Min Typ Max Unit
2.6
3 GHz
8
dBm
108
dBc/Hz
Ref. : DSCHV12036212 -July the 29th, 2016
1/10
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 - www.ums-gaas.com