CHS5105-QAG Datasheet, PDF (1/12 Pages) United Monolithic Semiconductors – DC-4GHz Reflective SPDT

CHS5105-QAG
DC-4GHz Reflective SPDT
GaAs Monolithic Microwave IC in SMD leadless package
Description
The CHS5105-QAG is a monolithic FET
based reflective switch.
It is designed for a wide range of
applications, from military to commercial
systems.
The circuit is manufactured with a pHEMT
process, 0.25µm gate length, via holes
through the substrate, air bridges and
electron beam gate lithography.
It is supplied in RoHS compliant SMD
package.
16 15 14 13
GND 1
RF IN ²
GND 3
NC 4
5 6 78
12 B
11 NC
10 NC
9A
Main Features
■ Broadband performance: DC-4GHz
■ Low insertion loss: 0.7dB
■ Isolation: 40dB
■ Return loss: 16dB
■ Input P1dB: 30dBm
■ QAG-QFN3x3
■ MSL1
Main Electrical Characteristics
Tamb.= +25°C
Symbol
Parameter
Freq Frequency range
IL
On state insertion loss
ISOL Off state isolation
RL On state return loss
IP1dB Input Power @1dB gain compression
Min Typ Max Unit
DC
4 GHz
0.7
dB
40
dB
16
dB
30
dBm
Ref. : DSCHS5105-QAG6187 - 05 Jul 16
1/12
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: [phone] - Fax: [phone]