CHS5104-99F_15 Datasheet, PDF (1/12 Pages) United Monolithic Semiconductors – DC-4GHz reflective SPDT

CHS5104-99F
DC-4GHz reflective SPDT
GaAs Monolithic Microwave IC
Description
The CHS5104-99F is a monolithic FET
based reflective switch.
It is designed for a wide range of
applications, from defense to commercial
communication systems.
The circuit is manufactured with a pHEMT
process, 0.25µm gate length, via holes
through the substrate, air bridges and
electron beam gate lithography.
It is available in chip form.
Main Features
■ Broadband performance: DC-4GHz
■ Low insertion loss: 0.5dB@4GHz
■ Isolation: 38dB@2GHz
30dB@4GHz
■ Return loss: 20dB@2GHz
13dB@4GHz
■ Input P1dB: 30dBm
■ Chip size: 0.8x0.8x0.07mm³
Main Electrical Characteristics
Tamb.= +25°C
Symbol
Parameter
Freq Frequency range
IL
On state insertion loss
ISOL Off state isolation
RL On state return loss
IP1dB Input Power @1dB gain compression
Min Typ Max Unit
DC
4 GHz
0.5
dB
35
dB
20
dB
30
dBm
Ref. : DSCHS51043168 - 17 Jun 13
1/12
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: [phone] - Fax: [phone]