CHE1260-QAG_10 Datasheet, PDF (1/14 Pages) United Monolithic Semiconductors – 10-27GHz Bidirectionnal Detector

CHE1260-QAG
RoHS COMPLIANT
10-27GHz Bidirectionnal Detector
GaAs Monolithic Microwave IC in SMD leadless package
Description
The CHE1260-QAG is a bidirectionnal
detector that integrates a passive
bidirectionnal coupler, two matched detector
diodes and two reference diodes.
It allows the measurement of transmitted
and reflected power. It is designed for a wide
range of applications where an accurate
transmitted power control is required,
typically commercial communication
systems.
The circuit is manufactured with a Schottky
diode MMIC process, 1µm gate length, via
holes through the substrate and air bridges.
It is supplied in leadless SMD package.
Main Features
■ Wide frequency range 10-27GHz
■ Bidirectionnal detection
■ 30dB dynamic range
■ ESD protected
■ 16L-QFN3x3 SMD package
■ MSL1
UMS
E1260
YYWW
Vref_R _{DC_R} Vdet_R
RF_in
RF_out
Vdet_I _{DC_I} Vref_I
10GHz
17GHz
27GHz
12GHz
22GHz
Main Characteristics
Tamb = +25°C, VDC = +4.5V (on DC_I and DC_R)
Symbol
Parameter
Min Typ Max
F
Frequency range
IL Insertion Loss
Dr Dynamic Range
10
27
1
15
ESD Protection: Electrostatic discharge sensitive device. Observe handling precautions!
Unit
GHz
dB
dB
Ref : DSCHE1260QAG0200 - 19 Jul 10
1/14
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel.: [phone] - Fax: [phone]