CHA8610-99F Datasheet, PDF (1/18 Pages) United Monolithic Semiconductors – 15W X Band High Power Amplifier

CHA8610-99F
15W X Band High Power Amplifier
GaN Monolithic Microwave IC
Description
V+
The CHA8610-99F is a two stage High
Power Amplifier operating between 8.5 and
11GHz and providing typically 15W of
saturated output power and 40% of power
added efficiency.
It is designed for a wide range of
In
Out
applications, from military to commercial
STG1 STG2
communication systems.
The circuit is manufactured with a pHEMT
process, 0.25µm gate length, via holes
through the substrate, air bridges and
electron beam gate lithography.
It is available in chip form.
V-
Main Features
■ Frequency range: 8.5-11GHz
■ High output power: 15W
■ High PAE: 40%
■ Linear Gain: 24dB
■ DC bias: Vd=30Volt @Id=0.68A
■ Chip size 5.08x2.75x0.1mm
■ Available in bare die
45
50
44
45
43
40
42
35
41
30
40
Pout @ Pin=23dBm
25
39
PAE @ Pin=23dBm
20
38
15
37
10
36
5
35
0
8 8.5 9 9.5 10 10.5 11 11.5
Frequency (GHz)
Pout and PAE versus frequency for Pulsed mode
Main Electrical Characteristics (Pulsed mode)
Tamb.= +25°C; Vd = +30V Pulse width = 25µs Duty cycle = 10%
Symbol
Parameter
Min Typ Max Unit
Freq Frequency range
8.5
11 GHz
Gain Linear Gain
24
dB
Pout Output Power
15
W
PAE Associated Power Added Efficiency.
40
%
Ref. : DSCHA86106180 - 28 jun 16
1/18
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: [phone] - Fax: [phone]