CHA8100 Datasheet, PDF (1/12 Pages) United Monolithic Semiconductors – X-band HBT High Power Amplifier

CHA8100
RoHS COMPLIANT
X-band HBT High Power Amplifier
GaAs Monolithic Microwave IC
Description
The CHA8100 chip is a monolithic two-
stage high power amplifier designed for X
band applications. The HPA provides
typically 11W output power, 40% power
added efficiency and a high robustness on
mismatched output. Moreover it includes:
• an analogue biasing circuit that makes
it less sensitive to spread and chip
environment.
• an integrated TTL interface that
enables to switch the HPA with a
current consumption lower than 1mA
The circuit is 100% DC and RF tested on
wafer to ensure performance compliance.
This device is manufactured using a GaInP
HBT process, including, via holes through
the substrate and air bridges.
TI Vc TO9
TO8
TTL
Circuit
IN
TTL
Circuit
TO8
TI Vc TO9
Main Features
11W output power in pulse mode
High gain: > 18dB @ 10GHz
High PAE: 40% @ 10GHz
Two biasing modes:
- Digital control thanks to TTL interface
- Analog control thanks to biasing circuit
Chip size: 4.9 x 3.68 x 0.1mm³
Vctrl
Vc
Vc
Biasing
Circuit
OUT
Biasing
Circuit
Vctrl
Vc
Vc
Main Characteristics
Vc=9V, Ic (Quiescent) = 2.1A, Pulse width=100µs, Duty cycle = 20%
Symbol
Parameter
Min
Typ
Top Operating temperature range (1)
-40
F_op Operating frequency range
9
P_sat Saturated output power @ 25°C
12.5
P_3dBc Output power @ 3dBc @ 25°C
11
G_lin Linear gain @ 25°C
17
ESD Protections: Electrostatic discharge sensitive device. Observe handling precautions!
(1) The reference is the back-side of the chip.
18.5
Max Unit
+80 °C
10.5 GHz
W
W
dB
Ref. : DSCHA81000069 - 10 Mar 10
1/12
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : [phone] - Fax : [phone]