CHA7215_15 Datasheet, PDF (1/8 Pages) United Monolithic Semiconductors – X-band High Power Amplifier

CHA7215
RoHS COMPLIANT
X-band High Power Amplifier
GaAs Monolithic Microwave IC
Description
The CHA7215 is a monolithic three-stage
GaAs high power amplifier designed for X
band applications.
The HPA provides typically 9W output power
associated to 35% power added efficiency at
4dBc and a high robustness on mismatch
load.
This device is manufactured using 0.25 µm
Power pHEMT process, including, via holes
through the substrate and air bridges.
Main Features
0.25 µm Power pHEMT Technology
Frequency band: 8.5 – 11.5GHz
Output power: 39.5dBm at saturation
High linear gain: 28dB
Power added efficiency: 34% @4dBc
Quiescent bias point: Vd=8V, Id=2.3A
Chip size: 5 x 3.31 x 0.07mm
VG1R ^VD1
●●
●
IN
●
VD1
VG2R ^VD2
●●
●
VD2
VG3R ^VD3
●●
●
OUT
●●
VG3R VD3
Output Power versus Frequency @Pin=19dBm
41
40,5
40
39,5
39
38,5
38
37,5
37
36,5
36
Temp=-40°C
Temp=+20°C
35,5
Temp=+80°C
35
8
8,5
9
9,5
10
10,5
11
11,5
12
Frequency (GHz)
Main Characteristics
Vd=8V, Id (Quiescent) = 2.3A, Drain Pulse width = 25µs, Duty cycle = 10%
Symbol
Parameter
Min Typ Max Unit
Top
Operating temperature range
-40
+80 °C
Fop
Operating frequency range
8.5
11.5 GHz
PAE_4dBc Power added efficiency @4dBc @ 20°C
34
%
Psat Saturated output power @ 20°C
39.5
dBm
G
Small signal gain @ 20°C
25
28
31
dB
ESD Protections: Electrostatic discharge sensitive device. Observe handling precautions!
Ref : DSCHA72159287 - 14 Oct 09
1/8
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : [phone] - Fax : [phone]