CHA7115-99F Datasheet, PDF (1/6 Pages) United Monolithic Semiconductors – X-band High Power Amplifier

CHA7115-99F
RoHS COMPLIANT
X-band High Power Amplifier
GaAs Monolithic Microwave IC
Description
Vg3 Vd3
The CHA7115 is a monolithic three-stage
GaAs high power amplifier designed for
X-band applications.
Vg2 Vd2
Vg1
The HPA provides typically 8W output power
associated to 36% power added efficiency at ^IN
OUT
4dBcomp and a high robustness on
mismatch load.
Vd1
Vd2
This device is manufactured using 0.25µm
Power pHEMT process, including, via holes
through the substrate and air bridges.
Vg3 Vd3
It is available in chip form.
Main Features
 0.25µm Power pHEMT Technology
 Frequency band: 8.5 – 11.5GHz
 Output power : 39dBm @ 4dBcomp
 High linear gain: > 27dB
 High PAE : 37% @ 4dBcomp
 Quiescent bias point: Vd=8V, Id=2.2A
 Chip size: 4.59 x 3.31 x 0.07mm
44
42
40 ^{Pout @ 4dBc}
38
36
34
32
PAE @ 4dBc
30
28
26
Linear Gain
24
Pulse : 25µs 10%
22
8
8.5
9
9.5
10
10.5
11
11.5
12
Frequency (GHz)
Main Characteristics
Vd = 8V, Id (Quiescent) = 2.2A, Drain Pulse width = 25µs, Duty cycle = 10%
Symbol
Parameter
Min Typ Max
Fop
Operating frequency range
8.5
11.5
PAE_4dB Power added efficiency @4dBcomp @ 20°C
37
P_4dB Output power @ 4dBcomp @ 20°C
39
G
Small signal gain @ 20°C
27.5
Unit
GHz
%
dBm
dB
ESD Protections: Electrostatic discharge sensitive device. Observe handling precautions!
Ref : DSCHA71151069 - 10 Mar 11
1/6
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : [phone] - Fax : [phone]