CHA7114_10 Datasheet, PDF (1/8 Pages) United Monolithic Semiconductors – X Band High Power Amplifier

CHA7114
RoHS COMPLIANT
X Band High Power Amplifier
GaAs Monolithic Microwave IC
Description
The CHA7114 is a monolithic two-stage
GaAs high power amplifier designed for
X band applications.
This device is manufactured using a UMS
0.25µm power pHEMT process, including,
via holes through the substrate and air
bridges.
To simplify the assembly process:
• The backside of the chip is both RF and
DC grounded
• Bond pads and back side are gold
plated for compatibility with eutectic die
attach method and thermo-compression
bonding process.
Main Features
0.25µm Power pHEMT Technology
8.5–11.5GHz Frequency Range
8W Output Power @ 4dBcp
High PAE: > 40% @ 4dBcp
20dB nominal Gain
Quiescent Bias point: Vd = 8V, Id = 2A
Chip size: 4.41 x 3.31 x 0.07mm
Vg2 Vd2
Vg1 Vd1
IN
Vg1 Vd1
OUT
Vg2 Vd2
50
45
PAE @ 4dBc
40
Pout @ 4dBc
35
30
25
20
Linear Gain
15
Pulse : 25µs 10%
10
8 8,5 9 9,5 10 10,5 11 11,5 12
Frequency (GHz)
Main Characteristics
Tamb = +25°C (Tamb is the back-side of the chip)
Vd = 8V, Id (Quiescent) = 2A, Pulse width = 25µs, Duty cycle = 10%
Symbol
Parameter
Min
Typ
Top Operating temperature range
-40
Fop Operating frequency range
8.5
P_4dBcp Output power @ 4dBcp @ 25°C
8
G
Small signal gain @ 25°C
20
ESD Protections: Electrostatic discharge sensitive device. Observe handling precautions!
Max Unit
+80 °C
11.5 GHz
W
dB
Ref : DSCHA7114-0197 - 16 Jul 10
1/8
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - BP46 - 91401 Orsay Cedex France
Tel.: [phone] - Fax : [phone]