CHA7010_04 Datasheet, PDF (1/7 Pages) United Monolithic Semiconductors – X-band GaInP HBT High Power Amplifier

CHA7010
RoHS COMPLIANT
X-band GaInP HBT High Power Amplifier
GaAs Monolithic Microwave IC
Description
The CHA7010 is a monolithic two-stage
GaAs high power amplifier designed for X
band applications.
This device is manufactured using a GaInP
HBT process, including, via holes through
the substrate and air bridges. A nitride
layer protects the transistors and the
passive components. Special heat removal
techniques are implemented to guarantee
high reliability.
To simplify the assembly process:
• the backside of the chip is both RF and
DC grounded
• bond pads and back side are gold
plated for compatibility with eutectic die
attach method and thermosonic or
thermocompression bonding process.
Vctr Vc
Main Features
10W output power
High gain : > 18dB @ 10GHz
High PAE : > 35% @ 10GHz
On-chip bias control
Linear collector current control
High impedance interface for pulse
mode
Temperature compensated
Chip size: 4.74 x 4.36 x 0.1 mm
Vctr
Vc
Input
Matching
Network
Inter-stage
Output
Combiner
Vctr
Vc
Main Characteristics
Tamb = +25°C
Vctr Vc
Symbol
Parameter
Min
Typ
F_op Operating frequency range
8.4
9.4
P_sat Saturated output power
10
P_1dBc Output power @ 1dBc
8
G_lin Linear gain
18
ESD Protections : Electrostatic discharge sensitive device observe handling precautions !
Max
10.4
Unit
GHz
W
W
dB
Ref. : DSCHA70104054 - 23 Feb 04
1/7
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : [phone] - Fax : [phone]