CHA7010 Datasheet, PDF (1/7 Pages) United Monolithic Semiconductors – X-band GaInP HBT High Power Amplifier

CHA7010
X-band GaInP HBT High Power Amplifier
GaAs Monolithic Microwave IC
Description
The CHA7010 is a monolithic two stage
GaAs high power amplifier designed for X
band applications.
This device is manufactured using a GaInP
HBT process, including, via holes through
the substrate and air bridges. A nitride
layer protects the transistors and the
passive components. Special heat removal
techniques are implemented to guarantee
high reliability.
To simplify the assembly process;
• the backside of the chip is both RF and
DC grounded
• bond pads and back side are gold
plated for compatibility with eutectic die
attach method and thermo-sonic or
thermo-compression bonding process.
Vctr Vc
Main Features
n 10W output power
n High gain : > 18dB @ 10GHz
n High PAE : > 35% @ 10GHz
n On-chip bias control
n Linear collector current control
n High impedance interface for pulse
mode
n Temperature compensated
n Chip size: 4.74 x 4.36 x 0.1 mm
Vctr
Vc
Input
Matching
Network
Inter-stage
Output
Combiner
Vctr Vc
Main Characteristics
Tamb = +25°C
Symbol
Parameter
Vctr Vc
Min
Typ Max Unit
F_op Operating frequency range
8.4
9.4 10.4 GHz
P_sat Saturated output power
10
W
P_1dBc Output power @ 1dBc
8
W
G_lin Linear gain
18
dB
ESD Protections : Electrostatic discharge sensitive device observe handling precautions !
Ref. : DSCHA70102175 -24-June-02
1/7
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : [phone] - Fax : [phone]