CHA6664-QDG Datasheet, PDF (1/10 Pages) United Monolithic Semiconductors – 12-16GHz 1W High Power Amplifier

CHA6664-QDG
RoHS COMPLIANT
12-16GHz 1W High Power Amplifier
GaAs Monolithic Microwave IC in SMD leadless package
Description
The CHA6664-QDG is a three-stages Ku-band
high power amplifier.
The circuit is manufactured with a standard
Power P-HEMT process: 0.25µm gate length,
via holes through the substrate, air bridges and
electron beam gate lithography.
It is supplied in RoHS compliant SMD package.
Main Features
dB(S21), dB(S11), dB(S22) versus frequency (GHz)
■ 0.25 µm Power pHEMT Technology
■ 12-16 GHz Frequency Range
■ 31.5 dBm Saturated Output Power
■ High gain: 28dB
■ Quiescent Bias Point: 8V, 600mA
■ 24L-QFN4x4 SMD package
Main Characteristics
35
30
25
20
15
10
5
0
-5
-10
-15
-20
-25
dB(S21)
-30
dB(S11)
-35
dB(S22)
-40
6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
Frequency (GHz)
Typical on board measurements
Tamb = +25°C, Vd1=Vd2=Vd3=+8V, Id (Quiescent)=600mA , CW biasing mode
Symbol
Parameter
F_op Operating Frequency Range
P_Sat Saturated output power
G_lin Linear Gain
Min Typ Max
12
16
31.5
28
ESD Protections: Electrostatic discharge sensitive device observe handling precautions!
Unit
GHz
dBm
dB
Ref. : DSCHA6664QDG6332 - 28 Nov 06
1/10
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - BP46 - 91401 Orsay Cedex France
Tel.: [phone] - Fax: [phone]