CHA6652-QXG Datasheet, PDF (1/18 Pages) United Monolithic Semiconductors – 21- 27.5GHz Power Amplifier

CHA6652-QXG
21- 27.5GHz Power Amplifier
GaAs Monolithic Microwave IC in SMD leadless package
Description
The CHA6652-QXG is a three stage
monolithic GaAs high power circuit producing
UMS 2 Watt output power. It is highly linear, with
possible gain control and integrates a power
A366878A _{detector. ESD protections are included.}
YYWWG
AU6M6^YY5S^AA_A^YY2_U^U33₃^WW66_6M^M6868₆₈^WW7878_S^S₇₈^AA_A^GG
YYWWG ^{It is designed for Point To Point Radio.}
YYWW^U^MS
The circuit is manufactured with a pHEMT
process, 0.15µm gate length.
It is supplied in RoHS compliant SMD
36 lead 6x5 mm QFN package
package.
Main Features
Output power vs frequency
36
■ Broadband performances: 21- 27.5GHz
34
UMS ^{■ 33dBm saturated power}
32
■ 41dBm OIP3
30
28
■ 20dB gain
26
■ DC bias: Vd = 6.0Volt @ Id = 1.3A
24
■ QFN 6x5
22
■ MSL3
20
18
16
14
Psat
P1dB
PAE at Psat.
18
19
20
21
22
23
24
25
26
27
28
Frequency (GHz)
A3687A ^{Main Electrical Characteristics}
Tamb.= +25°C
Symbol
Parameter
Freq Frequency range
Gain Linear Gain
Psat Saturated output power
OIP3 Output IP3
Min Typ Max Unit
21
27.5 GHz
20
dB
33
dBm
41
dBm
Ref. : DSCHA6652-QXG6159- 07 Jun 16
1/18
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: [phone] - Fax: [phone] - www.ums-gaas.com